Wide-Bandgap SiC Semiconductors – Advantages and Limitations in EV Drive Applications

Authors

M. Schubert, Leadrive Technology Germany GmbH; Y. Xia, J. Shen, Leadrive Technology

Summary

In recent years, silicon carbide (SiC) semiconductors have gained significant interest in power electronics. Higher maximum junction temperature, lower losses and smaller thermal impedance promise increased power density, increased efficiency, and higher operating temperature. These advantages are indisputable for many converter applications, such as DC/DC converters and chargers, as they allow higher switching frequencies which leads to significant savings on the passive components, such as inductors and capacitors. For electrical drive systems this logic is not directly applicable. Especially with respect to the electric motor, certain limitations exist which limit the power density and the loss-reduction potential. This paper gives an overview of the advantages and limitations of SiC semiconductors in EV drive applications. A comparison between an active series IGBT inverter from Leadrive Technology and its SiC twin identifies the power savings potential.